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Quality control is imperative for Cannabis since the primary cannabinoids, Δ 9 -tetrahydrocannabinol (THC) and cannabidiol (CBD), elicit very different pharmacological effects. THC/CBD ratios are currently determined by techniques not readily accessible by consumers or dispensaries and which are impractical for use in the field by law-enforcement agencies. CuPc- and F16-CuPc-based organic thin-film transistors have been combined with a cannabinoid-sensitive chromophore for the detection and differentiation of THC and CBD. The combined use of these well-characterized and inexpensive p- and n-type materials afforded the determination of the CBD/THC ratio from rapid plant extracts, with results indistinguishable from high-pressure liquid chromatography. Analysis of the prepyrolyzed sample accurately predicted postpyrolysis THC/CBD, which ultimately influences the psychotropic and medicinal effects of the specific plant. The devices were also capable of vapor-phase sensing, producing a unique electrical output for THC and CBD relative to other potentially interfering vaporized organic products. The analysis of complex medicinal plant extracts and vapors, normally reserved for advanced analytical infrastructure, can be achieved with ease, at low cost, and on the spot, using organic thin-film transistors.

Keywords: CBD; THC; analytical methods; organic thin-film transistors; sensors.

For standard applications, you do not need to take care of these things as on the one hand Analog Insydes provides a library with built-in device models and on the other hand there is no need to write netlists by hand as this is automatically done by ReadNetlist . Following, we explain the internal model mechanism which is implemented in the Analog Insydes model library.

In[32]:= eqscmoshf = CircuitEquations[cmosdiffamp,
ElementValues -> Symbolic,
DefaultSelector -> HighFrequency]

In[30]:= hfMOSmodel =
Circuit[
Model[
Name -> MOSFET,
Selector -> HighFrequency,
Scope -> Global,
Ports -> ,
Parameters -> GM$ac, GMB$ac, GDS$ac, CGS$ac, CGD$ac, CBS$ac,
CBD$ac>,
Definition -> Netlist[
, Value -> CGS$ac, Symbolic -> Cgs>,
, Value -> CGD$ac, Symbolic -> Cgd>,
, Value -> GM$ac,
Symbolic -> gm>,
, Value -> GDS$ac, Symbolic -> Gds>,
, Value -> GMB$ac,
Symbolic -> gmb>,
, Value -> CBD$ac, Symbolic -> Cbd>,
, Value -> CBS$ac, Symbolic -> Cbs>
]
]
]

Let’s examine the effects of the preceding parameter definitions and assignments by recalculating the single-input-to-single-ended voltage transfer function of the differential amplifier, this time using the high-frequency MOS model we just defined. First, we set up symbolic circuit equations using the option setting DefaultSelector -> HighFrequency .

The techniques for passing parameters to subcircuit instances have already been dealt with in Chapter 2.3, and the same approaches can be used to handle instance-specific design-point information. Here, we just have to observe the additional requirement that every element in a model netlist now needs two symbolic parameters: one that represents the symbolic value of the element and one that is replaced by the associated numerical value during subcircuit expansion.

N1 – Funding Information: This study was supported by the R&D Center for Valuable Recycling (Global-Top R&BD Program) of the Ministry of Environment (Project No.: 2016002250005 ).

AU – Kim, Dae guen

AU – Lee, Chan Gi

T1 – Low-voltage operating solution-processed CdS thin-film transistor with Ca 2 Nb 3 O 10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator

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AU – Jung, Seungmin

N2 – One of the most demanding challenges in next-generation thin-film transistors (TFTs) is the development of new materials for high-performance devices with higher speed and lower operation voltage. To drive a TFT at a low power, it is important to form an insulating layer as a thin film with good characteristics. Langmuir–Blodgett (LB) technique is one of the most suitable methods for controlling and developing two-dimensional nanomaterials. In the LB method, a layer only one molecule thick (Langmuir monolayer) is spread at the air/water interface and transferred onto the surface of a solid substrate and the process can be repeated several times with the same substrate to deposit multilayer films. In this study, a Ca 2 Nb 3 O 10 (CNO) dielectric layer was fabricated using the LB method, and a CdS active layer was fabricated using the chemical bath deposition (CBD) method to obtain the final structure of CdS-TFTs. CNO dielectric layers have low leakage current density (7.26 × 10 −7 A cm −2 ) and a high capacitance density of 944 nF cm −2 at 100 kHz. Therefore, it is considered that the CNO films produced using the LB method are suitable as an insulating layer material. Furthermore, the CdS-TFTs exhibited good performance with a low threshold voltage of 0.596 V, I on /I off current ratio of 10 6 , subthreshold slope of 0.05 V dec −1 , and high mobility of 0.428 cm 2 V −1 s −1 at operating voltages less than 2 V.

Research output : Contribution to journal › Article › peer-review

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One of the most demanding challenges in next-generation thin-film transistors (TFTs) is the development of new materials for high-performance devices with higher speed and lower operation voltage. To drive a TFT at a low power, it is important to form an insulating layer as a thin film with good characteristics. Langmuir–Blodgett (LB) technique is one of the most suitable methods for controlling and developing two-dimensional nanomaterials. In the LB method, a layer only one molecule thick (Langmuir monolayer) is spread at the air/water interface and transferred onto the surface of a solid substrate and the process can be repeated several times with the same substrate to deposit multilayer films. In this study, a Ca 2 Nb 3 O 10 (CNO) dielectric layer was fabricated using the LB method, and a CdS active layer was fabricated using the chemical bath deposition (CBD) method to obtain the final structure of CdS-TFTs. CNO dielectric layers have low leakage current density (7.26 × 10 −7 A cm −2 ) and a high capacitance density of 944 nF cm −2 at 100 kHz. Therefore, it is considered that the CNO films produced using the LB method are suitable as an insulating layer material. Furthermore, the CdS-TFTs exhibited good performance with a low threshold voltage of 0.596 V, I on /I off current ratio of 10 6 , subthreshold slope of 0.05 V dec −1 , and high mobility of 0.428 cm 2 V −1 s −1 at operating voltages less than 2 V.

AU – Kang, Leeseung